| CPC H01L 23/49827 (2013.01) [H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 21/76898 (2013.01); H01L 23/3128 (2013.01); H01L 23/3157 (2013.01); H01L 23/481 (2013.01); H01L 24/02 (2013.01); H01L 24/06 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01)] | 24 Claims |

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1. A method, comprising:
forming a wafer-level interposer substrate having a first side and a second side opposite the first side, the wafer-level interposer substrate includes a support structure in an edge area on the first side;
forming a through-substrate via (TSV) extending between the first side and the second side of the wafer-level interposer substrate;
flip chip mounting at least two semiconductor die on the first side of the wafer-level interposer substrate;
encapsulating the at least two semiconductor die mounted on the first side of the wafer-level interposer substrate in a layer of molding material; and
singulating a wafer-level assembly of the wafer-level interposer substrate and the layer of molding material encapsulating the at least two semiconductor die mounted on the wafer-level interposer substrate to produce at least one individual system-in-package including the at least two semiconductor die.
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