US 12,463,117 B2
Semiconductor device
Fumiyoshi Kawashiro, Chiyoda Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki (JP); and Toshiba Electronic Devices & Storage Corporation, Kawasaki (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Sep. 8, 2022, as Appl. No. 17/940,519.
Claims priority of application No. 2022-044756 (JP), filed on Mar. 19, 2022.
Prior Publication US 2023/0298976 A1, Sep. 21, 2023
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/49513 (2013.01) [H01L 23/49534 (2013.01); H01L 24/48 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lead frame including a first bed including a first upper surface and a first outer lead connected to the first bed;
a first post including a second bed including a second upper surface and a second outer lead connected to the second bed, and the first bed being provided between the first outer lead and the first post;
a second post including a third bed including a third upper surface and a third outer lead connected to the third bed;
a semiconductor chip provided on the first upper surface, the semiconductor chip including
a fourth upper surface having an electrode and a control electrode, and
an insulating film provided on the fourth upper surface, and the insulating film including a first opening provided on the electrode and a second opening provided on the control electrode;
a first bonding material provided between the first upper surface and the semiconductor chip, the first bonding material joining the first upper surface and the semiconductor chip, the first bonding material including a first bonding material portion and a second bonding material portion, a first film thickness of the first bonding material portion below the control electrode being thinner than a second film thickness of the second bonding material portion on the second portion of the first bed, the second portion being provided between the first portion of the first bed below the first bonding material portion and the first outer lead;
a first connector having a first end provided on the electrode and a second end provided on the second upper surface;
a second bonding material provided between the electrode and the first end, the second bonding material joining the electrode and the first end; and
a third bonding material provided between the second upper surface and the second end, the third bonding material joining the control electrode and the second end.