US 12,463,116 B2
Method for fabricating a semiconductor device including an embedded semiconductor die
Edward Fuergut, Dasing (DE); Achim Althaus, Regensburg (DE); Martin Gruber, Schwandorf (DE); Marco Nicolas Mueller, Villach (AT); Bernd Schmoelzer, Radenthein (AT); Wolfgang Scholz, Olching (DE); and Mark Thomas, Bodensdorf (AT)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Feb. 29, 2024, as Appl. No. 18/591,755.
Application 18/591,755 is a division of application No. 17/173,757, filed on Feb. 11, 2021, granted, now 12,002,739.
Claims priority of application No. 20156858 (EP), filed on Feb. 12, 2020.
Prior Publication US 2024/0250004 A1, Jul. 25, 2024
Int. Cl. H01L 23/485 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/13 (2006.01); H01L 23/14 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/485 (2013.01) [H01L 21/56 (2013.01); H01L 23/3135 (2013.01); H01L 23/13 (2013.01); H01L 23/142 (2013.01); H01L 23/49548 (2013.01); H01L 23/49861 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
providing a die carrier;
disposing a semiconductor die on a main face of the die carrier, the semiconductor die comprising one or more contact pads;
applying an encapsulant at least partially to the semiconductor die and only a portion of the main face of the die carrier that is not covered by the semiconductor die;
applying an insulation layer to the encapsulant and at least a portion of the main face of the die carrier that is not covered by the semiconductor die or the encapsulant; and
fabricating electrical interconnects by forming openings into the encapsulant and the insulation layer and filling a conductive material into the openings.