US 12,463,102 B2
Semiconductor device structure and method for forming the same
Hsiao-Lan Yeh, Tainan (TW); Chin-Kang Chen, Taoyuan (TW); Kung-Hua Cheng, Taoyuan (TW); Szu-Hui Ma Lee, Taoyuan (TW); and Chi-Jia Tong, Taoyuan (TW)
Assigned to XINTEC INC., Taoyuan (TW)
Filed by XINTEC INC., Taoyuan (TW)
Filed on May 1, 2023, as Appl. No. 18/310,488.
Claims priority of provisional application 63/340,896, filed on May 11, 2022.
Prior Publication US 2023/0369151 A1, Nov. 16, 2023
Int. Cl. H01L 23/14 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01)
CPC H01L 23/142 (2013.01) [H01L 21/02348 (2013.01); H01L 21/56 (2013.01); H01L 21/6835 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68345 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first transparent substrate having a first surface and a second surface, which are opposite one another;
a conductive layer disposed on the second surface of the first transparent substrate;
an insulating protective layer covering the conductive layer and the first transparent substrate;
a second transparent substrate disposed over the first transparent substrate and having a first surface facing the first transparent substrate and a second surface, which are opposite one another;
a device substrate disposed on the second surface of the second transparent substrate; and
a bonding layer bonding the insulating protective layer to the first surface of the second transparent substrate.