US 12,463,094 B2
Multiple-layer method and system for forming material within a gap
Hannu Huotari, Helsinki (FI); Viljami Pore, Helsinki (FI); Timothee Blanquart, Oud-Heverlee (BE); René Henricus Jozef Vervuurt, Leuven (BE); Charles Dezelah, Helsinki (FI); Giuseppe Alessio Verni, Jodoigne (BE); Ren-Jie Chang, Leuven (BE); Michael Givens, Oud-Heverlee (BE); and Eric James Shero, Phoenix, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Sep. 27, 2022, as Appl. No. 17/953,585.
Claims priority of provisional application 63/250,302, filed on Sep. 30, 2021.
Prior Publication US 2023/0101229 A1, Mar. 30, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/76882 (2013.01) [H01L 21/02126 (2013.01); H01L 21/0228 (2013.01); H01L 21/67109 (2013.01); H01L 21/76832 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber, the substrate comprising a gap on a surface of the substrate;
forming a layer of first material within the gap, the first material having a region formed therein; and
forming an initially flowable material within the region,
wherein the first material is conductive.