| CPC H01L 21/76243 (2013.01) [H01L 21/31155 (2013.01); H01L 21/743 (2013.01); H01L 22/14 (2013.01)] | 20 Claims |
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1. A system for testing a semiconductor structure, comprising:
the semiconductor structure, including:
a semiconductor substrate including a first side and a second side opposite the first side;
a doped layer buried below the first side;
a plurality of gate-all-around (GAA) transistors disposed over the first side wherein each GAA transistor includes: a stack of channel layers extending vertically from the semiconductor substrate; a gate structure wrapping around the stack of channel layers; and source/drain structures on opposite sides of the gate structure; wherein each of the GAA transistors is coupled to the doped layer through a respective doped semiconductor contact structure extending vertically through the semiconductor substrate; and
a plurality of interconnect structures coupled to the source/drain transistors over the first side;
a tester disposed over the first side and configured to apply an electrical signal to the doped layer through the interconnect structures; and
a testing device disposed over the second side and configured to test electrical connections in the semiconductor structure in response to the applied electrical signal.
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