| CPC H01L 21/68757 (2013.01) [C23C 16/24 (2013.01); C23C 16/50 (2013.01); H01L 21/67115 (2013.01); H01L 21/68735 (2013.01); H01L 2221/683 (2013.01)] | 15 Claims |

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7. A chamber for processing a substrate, comprising:
a body having a sidewall and a bottom;
a lid coupled to the body and partially defining a processing volume therein;
a substrate support disposed in the processing volume, the substrate support comprising:
a support cylinder;
an edge ring configured to support a substrate; and
a support ring configured to support the edge ring and disposed on the support cylinder, the support ring comprising:
an annular ring body formed of opaque quartz, the ring body comprising:
an inner surface and an outer surface;
a first side surface opposite a second side surface;
a first annular shoulder disposed between the inner surface and the first side surface of the ring body, the first annular shoulder having a top surface disposed above the first side surface of the ring body; and
a second annular shoulder of the ring body disposed between the outer surface and the second side surface of the ring body, the second annular shoulder having a bottom surface disposed below the second side surface of the ring body, the outer surface having a height greater than a height of the inner surface; and
a coating selectively disposed on the first side surface of the ring body relative to other surfaces of the ring body, wherein the first annular shoulder and the second side are uncoated, and wherein the coating has a uniform thickness between the first annular shoulder and the outer surface, the uniform thickness between about 10 microns and about 150 microns with a thickness variation within plus or minus 20%, the coating comprising a silicon material deposited by a plasma spray deposition process.
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