US 12,463,065 B2
Gas flow control during semiconductor fabrication
Yu-Liang Yeh, Kaohsiung (TW); Chih-Kang Chao, Tainan (TW); and Bing Kai Huang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/876,845.
Application 17/876,845 is a division of application No. 16/991,168, filed on Aug. 12, 2020.
Prior Publication US 2022/0375770 A1, Nov. 24, 2022
Int. Cl. H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); C23C 16/44 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/67069 (2013.01) [H01J 37/32623 (2013.01); H01J 37/32816 (2013.01); H01J 37/32834 (2013.01); H01L 21/30604 (2013.01); H01L 21/32136 (2013.01); C23C 16/4412 (2013.01); H01J 37/32449 (2013.01); H01L 21/311 (2013.01); Y10S 438/935 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
introducing a process gas into an interior space of a process chamber through a gas inlet port, wherein a substrate is supported within the interior space;
evacuating the process gas from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber; and
controlling a flow of the process gas established by evacuating the process gas with the vacuum source by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port, wherein controlling the flow of the process gas comprises:
controlling a seal member to overlap a portion of the exhaust port to define a crescent shaped aperture.