US 12,463,064 B2
Substrate processing method and substrate processing apparatus
Kouzou Tachibana, Koshi (JP); Katsuhiro Morikawa, Koshi (JP); Kouichi Mizunaga, Koshi (JP); Masami Akimoto, Koshi (JP); and Kousuke Negishi, Koshi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Oct. 25, 2021, as Appl. No. 17/510,234.
Claims priority of application No. 2020-179057 (JP), filed on Oct. 26, 2020.
Prior Publication US 2022/0130691 A1, Apr. 28, 2022
Int. Cl. H01L 21/683 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/67051 (2013.01) [H01L 21/67046 (2013.01); H01L 21/67103 (2013.01); H01L 21/67248 (2013.01); H01L 21/6838 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A substrate processing method of performing liquid processing on a substrate in a substrate processing apparatus including a substrate table configured to suction the substrate, a heater configured to heat the substrate table, and a processing liquid nozzle configured to supply a processing liquid to the substrate suctioned to the substrate table, the substrate processing method comprising:
a heating process of heating the substrate table to a predetermined temperature while the substrate is elevated from the substrate table by a lift pin;
after the heating process, a placement process of lowering the lift pin below a top surface of the substrate table and placing the substrate on the top surface of the substrate table heated to the predetermined temperature so as to cause a direct heat conduction between the substrate and the substrate table such that the substrate is heated by the substrate table, without suctioning the substrate;
after the placement process, measuring a temperature of the substrate and performing a suctioning process of suctioning the substrate by the substrate table when there is no temperature difference between the substrate and the substrate table or when a temperature difference between the substrate and the substrate table is within a predetermined range;
after the suctioning process, a processing liquid supply process of supplying the processing liquid having the predetermined temperature from the processing liquid nozzle to the substrate while the substrate is positioned on the substrate table;
after the processing liquid supply process, a wafer unloading process of releasing the suction of the substrate and taking out the substrate from the substrate table by raising the lift pin; and
after the wafer unloading process, a cleaning process of cleaning a suction surface of the substrate table by ejecting a cleaning liquid having the predetermined temperature from a cleaning nozzle to the suction surface.