| CPC H01L 21/67034 (2013.01) [H01L 21/02057 (2013.01); H01L 21/67051 (2013.01); H01L 21/68785 (2013.01)] | 17 Claims |

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1. A substrate processing apparatus for processing a substrate, comprising:
a substrate holder configured to hold and rotate the substrate;
a liquid supply mechanism configured to supply a liquid from a liquid nozzle onto the substrate;
a dry fluid supply mechanism configured to supply a dry fluid from a dry fluid nozzle onto the substrate;
a nozzle movement mechanism configured to move the liquid nozzle and the dry fluid nozzle; and
a controller configured to control operations of the substrate holder, the liquid supply mechanism, and the dry fluid supply mechanism,
wherein the controller is configured to:
issue a command to the substrate holder to rotate the substrate at a first speed;
issue a command to the liquid supply mechanism to form a liquid film on an entire surface of the substrate by supplying the liquid from the liquid nozzle positioned above a center of the substrate onto the substrate for a predetermined time;
issue a command to the liquid supply mechanism to stop a supply of the liquid;
issue a command to the substrate holder, after rotating the substrate at the first speed, to rotate the substrate at a second speed;
issue a command to the substrate holder, after rotating the substrate at the second speed, to rotate the substrate at a third speed, and issue a command to the dry fluid supply mechanism, while rotating the substrate at the third speed, to supply the dry fluid from the dry fluid nozzle positioned above the center of the substrate onto the substrate for a predetermined time; and
issue a command to the nozzle movement mechanism while continuing to supply the dry fluid from the dry fluid nozzle to move the dry fluid nozzle from the center of the substrate toward a peripheral portion of the substrate,
wherein the substrate processing apparatus further comprises an inert gas supply mechanism configured to supply an inert gas from an inert gas nozzle onto the substrate,
wherein the controller is configured to issue a command to the inert gas supply mechanism in a state in which the dry fluid is supplied onto the substrate, and the substrate is rotating at a fourth speed to supply the inert gas from the inert gas nozzle onto the substrate, and
wherein the controller is configured to issue a command to the nozzle movement mechanism to move the inert gas nozzle from the center of the substrate toward the peripheral portion of the substrate.
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