US 12,463,054 B2
Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method
Mann Ho Cho, Seoul (KR); and Gi Hyeon Kwon, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and industry-Academic Cooperation Foundation, Yonsei University, Seoul (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 18, 2022, as Appl. No. 17/968,169.
Claims priority of application No. 10-2022-0025551 (KR), filed on Feb. 25, 2022.
Prior Publication US 2023/0274948 A1, Aug. 31, 2023
Int. Cl. H01L 21/443 (2006.01); H01L 21/02 (2006.01); H10D 48/36 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 99/00 (2025.01)
CPC H01L 21/443 (2013.01) [H01L 21/02568 (2013.01); H10D 48/362 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 99/00 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
forming a semiconductor layer, the semiconductor layer including a two-dimensional semiconductor material;
forming a sacrificial layer on the semiconductor layer;
forming a metal contact layer on the sacrificial layer; and
removing the sacrificial layer,
wherein, after the sacrificial layer is removed, the semiconductor layer and the metal contact layer are bonded to each other through a van der Waals bond.