US 12,463,053 B2
Method for etching high aspect ratio structures
Feng Qiao, Santa Clara, CA (US); Hailong Zhou, Santa Clara, CA (US); Qian Fu, Santa Clara, CA (US); Sangjun Park, Santa Clara, CA (US); Jayoung Choi, Santa Clara, CA (US); Radhe Agarwal, Santa Clara, CA (US); and Tong Liu, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 30, 2023, as Appl. No. 18/193,455.
Prior Publication US 2024/0332031 A1, Oct. 3, 2024
Int. Cl. H01L 21/3213 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/32137 (2013.01) [H01L 21/3065 (2013.01); H01L 21/32139 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of patterning a substrate comprising:
(a) etching a substrate with a first etchant to form a recess to a first depth within the substrate, the substrate having a mask layer disposed thereon, wherein an etch byproduct from the substrate forms a clogging material at a top of the recess;
(b) depositing a passivation layer on the clogging material and sidewalls of the recess;
(c) performing a second etch operation with a second etchant on the passivation layer to remove the clogging material formed from the etch byproduct on the mask layer; and
(d) etching with the first etchant the recess to a second depth.