US 12,463,052 B2
Directional selective junction clean with field polymer protections
Yu Lei, Belmont, CA (US); Xuesong Lu, San Jose, CA (US); Tae Hong Ha, San Jose, CA (US); Xianmin Tang, San Jose, CA (US); Andrew Nguyen, San Jose, CA (US); Tza-Jing Gung, San Jose, CA (US); Philip A. Kraus, San Jose, CA (US); Chung Nang Liu, Foster City, CA (US); Hui Sun, San Jose, CA (US); and Yufei Hu, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 22, 2022, as Appl. No. 17/846,155.
Application 17/846,155 is a division of application No. 16/881,145, filed on May 22, 2020, granted, now 11,562,909.
Prior Publication US 2022/0336223 A1, Oct. 20, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32091 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01L 21/02118 (2013.01); H01L 21/31058 (2013.01); H01L 21/67069 (2013.01); H01L 21/6835 (2013.01); H10D 84/0135 (2025.01); H10D 84/038 (2025.01); H01J 2237/334 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A processing chamber comprising:
a chamber body having a lid, bottom wall, and at least one sidewall defining a processing volume;
a nozzle connected to a gasline and in fluid communication with the processing volume;
a gas source located outside of the chamber body and in fluid communication with the gasline, the gas source comprising a gas comprising CHXFy;
a plurality of coils on the lid of the chamber body and near the gasline, the plurality of coils configured to generate an inductively coupled plasma (ICP) of the gas in the processing volume;
a substrate support comprising an electrostatic chuck, the electrostatic chuck configured to generate a capacitively coupled plasma (CCP) of the gas in the gas-processing volume;
wherein one of the lid and the electrostatic chuck is connected to an RF power source and the other of the lid and the electrostatic chuck is connected to electrical ground to generate a plasma within the processing volume;
a controller configured to cause the processing chamber to perform operations of:
flowing the ICP of the gas into the processing volume of the processing chamber to form a polymer layer on a sidewall and a bottom surface of a feature on a substrate, the feature located between a first metal gate structure and a second metal gate structure, the bottom surface of the feature comprising a dielectric layer on a top surface of an epitaxial layer,
and selectively removing the dielectric layer by flowing the CCP of the gas into the processing volume of the processing chamber.