US 12,463,046 B2
Silicon-and-germanium etching
Anchuan Wang, San Jose, CA (US); Jiayin Huang, Fremont, CA (US); and Kalpana Suen, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 29, 2023, as Appl. No. 18/128,036.
Prior Publication US 2024/0332027 A1, Oct. 3, 2024
Int. Cl. H01L 21/3065 (2006.01)
CPC H01L 21/3065 (2013.01) 18 Claims
OG exemplary drawing
 
1. A semiconductor processing method comprising:
providing a first fluorine-containing precursor to a remote plasma system of a semiconductor processing chamber;
generating plasma effluents of the first fluorine-containing precursor in the remote plasma system;
providing plasma effluents of the first fluorine-containing precursor to a processing region of the semiconductor processing chamber;
providing a second fluorine-containing precursor to the processing region of the semiconductor processing chamber, wherein the second fluorine-containing precursor comprises silicon tetrafluoride (SiF4), and wherein a substrate comprising alternating layers of material is disposed within the processing region, and wherein the alternating layers of material comprise a silicon-and-germanium-containing material;
contacting the substrate with the plasma effluents of the first fluorine-containing precursor and with the second fluorine-containing precursor; and
etching the silicon-and-germanium-containing material of the alternating layers of material on the substrate.