US 12,463,040 B2
Methods for doping high-K metal gates for tuning threshold voltages
Kuo-Feng Yu, Zhudong Township (TW); Chun Hsiung Tsai, Xinpu Township (TW); Jian-Hao Chen, Hsinchu (TW); Hoong Shing Wong, Hsinchu (TW); and Chih-Yu Hsu, Xinfeng Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 20, 2022, as Appl. No. 17/664,325.
Application 17/664,325 is a division of application No. 16/572,820, filed on Sep. 17, 2019, granted, now 11,342,188.
Prior Publication US 2022/0285161 A1, Sep. 8, 2022
Int. Cl. H01L 21/28 (2025.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H01L 21/28176 (2013.01) [H01L 21/0332 (2013.01); H01L 21/28185 (2013.01); H01L 21/31144 (2013.01); H10D 30/024 (2025.01); H10D 64/017 (2025.01); H10D 84/0144 (2025.01); H10D 84/0158 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
depositing a doping-metal-containing layer comprising a first portion over a first gate dielectric;
depositing a hard mask comprising a first portion over and contacting the first portion of the doping-metal-containing layer, wherein an entirety of the hard mask is formed of a homogenous material;
performing a treatment process on the hard mask, wherein the treatment process is performed using a process gas comprising nitrogen therein;
forming an etching mask comprising a first portion over and contacting the first portion of the hard mask;
performing an anneal process to drive a dopant in the doping-metal-containing layer into the first gate dielectric; and
removing the doping-metal-containing layer.