US 12,463,038 B2
Carbon and boron implantation for backside chemical mechanical planarization control
Yan Zhang, Westford, MA (US); Johannes M. van Meer, Middleton, MA (US); Jae Young Lee, Bedford, MA (US); and Naushad Variam, Marblehead, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 3, 2023, as Appl. No. 18/105,302.
Prior Publication US 2024/0266175 A1, Aug. 8, 2024
Int. Cl. H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/26506 (2013.01) [H01L 21/30625 (2013.01); H01L 21/76898 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device having active devices connected with a backside power delivery system, comprising:
implanting a marking species into a front side of a workpiece to create a Chemical Mechanical Planarization (CMP) marker layer, wherein the CMP marker layer has a peak concentration of the marking species at a first depth;
implanting a first species of ions into the front side of the workpiece such that a peak concentration of the first species of ions is at a second depth, greater than the first depth, wherein the first species of ions suppress diffusion of the marking species, wherein the first depth and the second depth are referenced to a same surface of the workpiece such that the first species of ions travel deeper into the workpiece than the marking species;
performing front end of line (FEOL) processes on the front side of the workpiece to create the active devices;
performing back end of line (BEOL) processes to create metallization layers on the front side of the semiconductor device;
thinning the workpiece using a CMP process on a backside of the workpiece, wherein the CMP process slows when the CMP marker layer is exposed;
creating nano through silicon vias (nTSVs) to expose the active devices within the semiconductor device; and
adding metallization layers to the back side of the workpiece, wherein the metallization layers contact the active devices.