US 12,463,037 B2
Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device
Werner Schustereder, Villach (AT); Ravi Keshav Joshi, Klagenfurt (AT); Hans-Joachim Schulze, Taufkirchen (DE); Ralf Siemieniec, Villach (AT); and Axel Koenig, Villach (AT)
Assigned to INFINEON TECHNOLOGIES AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 20, 2022, as Appl. No. 17/869,567.
Claims priority of application No. 102021118863.6 (DE), filed on Jul. 21, 2021; and application No. 102022114411.9 (DE), filed on Jun. 8, 2022.
Prior Publication US 2023/0024105 A1, Jan. 26, 2023
Int. Cl. H01L 21/04 (2006.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01)
CPC H01L 21/0485 (2013.01) [H10D 62/8325 (2025.01); H10D 64/62 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A method of manufacturing Ohmic contacts on a silicon carbide (SiC) substrate, the method comprising:
providing a SiC substrate, wherein the SiC substrate is a 4H—SiC substrate or a 6H—SiC substrate;
implanting dopants into a surface region of the SiC substrate;
annealing the surface region to form a 3C—SiC layer; and
depositing a metal layer on the 3C—SiC layer,
wherein an implanting sequence of the implanting the dopants comprises a plurality of plasma deposition acts with implantation energy levels comprising at least two different implantation energy levels, and wherein the implantation energy levels of the plurality of plasma deposition acts and one or more implantation doses of the plurality of plasma deposition acts are selected to form a 3C-SiC layer in the surface region of the SiC substrate during the annealing.