US 12,463,036 B2
High density carbon films for patterning applications
Eswaranand Venkatasubramanian, Santa Clara, CA (US); Samuel E. Gottheim, Santa Clara, CA (US); Pramit Manna, Santa Clara, CA (US); and Abhijit Basu Mallick, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 13, 2023, as Appl. No. 18/507,328.
Application 18/507,328 is a continuation of application No. 16/593,757, filed on Oct. 4, 2019, granted, now 11,842,897.
Claims priority of provisional application 62/751,213, filed on Oct. 26, 2018.
Prior Publication US 2024/0087894 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); C23C 16/27 (2006.01); C23C 16/509 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/0337 (2013.01) [C23C 16/272 (2013.01); C23C 16/509 (2013.01); H01J 37/32724 (2013.01); H01L 21/0332 (2013.01); H01L 21/6833 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 37/32834 (2013.01); H01J 2237/1825 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/3321 (2013.01); H01L 21/0273 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01); H01L 21/67248 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a carbon film on a substrate, comprising:
flowing a hydrocarbon-containing gas mixture into a process chamber having the substrate positioned on an electrostatic chuck comprising a first radio frequency (RF) electrode and a second RF electrode disposed within the electrostatic chuck, wherein the substrate is maintained at a temperature of −50° C. to 350° C.; and
generating a plasma by applying a first RF bias to the first RF electrode of the electrostatic chuck to deposit a diamond-like carbon film on the substrate.