US 12,463,034 B2
Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern
Yi-Chen Kuo, Taichung (TW); Chih-Cheng Liu, Hsinchu (TW); Ming-Hui Weng, New Taipei (TW); Jia-Lin Wei, Hsinchu (TW); Yen-Yu Chen, Taipei (TW); Jr-Hung Li, Chupei (TW); Yahru Cheng, Taipei (TW); Chi-Ming Yang, Hsinchu (TW); Tze-Liang Lee, Hsinchu (TW); and Ching-Yu Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 2, 2024, as Appl. No. 18/761,585.
Application 18/761,585 is a continuation of application No. 18/204,259, filed on May 31, 2023, granted, now 12,057,315.
Application 18/204,259 is a continuation of application No. 17/150,403, filed on Jan. 15, 2021, granted, now 11,705,332, issued on Jul. 18, 2023.
Claims priority of provisional application 63/026,695, filed on May 18, 2020.
Claims priority of provisional application 63/002,297, filed on Mar. 30, 2020.
Prior Publication US 2024/0355623 A1, Oct. 24, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/0275 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02362 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a resist layer over a substrate;
changing a surface of the resist layer from a hydrophilic surface to a hydrophobic surface or forming a monolayer made of a silicon oxide, a silicon nitride, a silicon carbide, SiOC, SiON, or multilayer combinations thereof over the resist layer;
patternwise crosslinking the resist layer; and
removing a portion of the resist layer not crosslinked during the patternwise crosslinking to form a pattern in the resist layer,
wherein a portion of the hydrophobic surface or the monolayer is removed after the patternwise crosslinking the resist layer and before the removing a portion of the resist layer.