US 12,463,032 B2
Substrates for optical and electron microscopy of 2D materials
Jerzy T Sadowski, Upton, NY (US); Chang-Yong Nam, Upton, NY (US); Nikhil Tiwale, Upton, NY (US); Ashwanth Subramanian, Upton, NY (US); Zhongwei Dai, Upton, NY (US); and Mingxing Li, Upton, NY (US)
Assigned to U.S. Department OF Energy, Washington, DC (US)
Filed by United States Department of Energy, Washington, DC (US)
Filed on Mar. 9, 2023, as Appl. No. 18/119,347.
Claims priority of provisional application 63/331,799, filed on Apr. 16, 2022.
Prior Publication US 2023/0335396 A1, Oct. 19, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/66 (2006.01); G01N 21/65 (2006.01); G01N 21/84 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02205 (2013.01); G01N 21/65 (2013.01); G01N 21/8422 (2013.01); H01L 22/12 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for providing an ultrathin, conductive, atomically flat, and amorphous metal oxide layer on a SiO2/Si substrate, the method comprising:
depositing the metal oxide layer on the SiO2/Si substrate forming a prepared substrate; and
exfoliating a 2D material onto the prepared substrate wherein the combination of metal oxide layer and SiO2/Si substrate simultaneously enables the optical determination of the thickness of 2D materials and spectro-microscopic measurements.