US 12,463,031 B2
Method of processing substrate, recording medium, and substrate processing apparatus
Atsuro Seino, Toyama (JP); Arito Ogawa, Toyama (JP); and Yutaka Matsuno, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Nov. 26, 2021, as Appl. No. 17/535,778.
Claims priority of application No. 2020-194947 (JP), filed on Nov. 25, 2020.
Prior Publication US 2022/0165565 A1, May 26, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01)
CPC H01L 21/02263 (2013.01) [C23C 16/45563 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) supplying a first gas containing hydrogen and oxygen to the substrate;
(b) supplying a second gas containing nitrogen and hydrogen to the substrate;
(c) supplying a third gas containing a halogen element to the substrate;
(d) supplying a reaction gas to the substrate, wherein the reaction gas contains at least one selected from the group of NH3; a mixture of N2 and H2; N2H2; N3H3; and N2H4;
(e) performing (a) and (b), non-simultaneously and alternately, for a plurality of times; and
(f) forming a nitride film on the substrate by performing (c) and (d) after performing (e).