US 12,463,022 B2
Placing table and substrate processing apparatus
Yusuke Kikuchi, Yamanashi (JP); and Masato Shinada, Tokyo (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Sep. 28, 2023, as Appl. No. 18/477,047.
Claims priority of application No. 2022-163291 (JP), filed on Oct. 11, 2022.
Prior Publication US 2024/0120182 A1, Apr. 11, 2024
Int. Cl. H01J 37/32 (2006.01); C23C 14/35 (2006.01); C23C 14/50 (2006.01); H01J 37/34 (2006.01)
CPC H01J 37/32724 (2013.01) [C23C 14/352 (2013.01); C23C 14/50 (2013.01); H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01J 37/345 (2013.01); H01J 2237/002 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/332 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A film forming method for forming a wiring by a sputtering method using physical vapor deposition, the method comprising:
bringing a contact surface of a freezing device into contact with a rear surface of an electrostatic chuck included in a placing table to cool the electrostatic chuck to a temperature of 150K or lower;
mounting a substrate on a placing surface of the electrostatic chuck and applying a chuck voltage to a chuck electrode embedded in the electrostatic chuck so that the substrate is electrostatically attracted to and held on the placing surface;
separating the freezing device from the electrostatic chuck by controlling a lifting mechanism; and
performing a film forming step including rotating the electrostatic chuck holding the substrate, supplying an excitation gas into a processing chamber, superimposing an RF bias voltage on the chuck voltage and applying the superimposed voltage to the electrostatic chuck.