US 12,463,020 B2
Support unit, apparatus for treating substrate with the same
Yun Seok Bak, Seongnam-si (KR); and Hyung Joon Kim, Pyeongtaek-si (KR)
Assigned to SEMES CO., LTD., Cheonan-si (KR)
Filed by SEMES CO., LTD., Cheonan-si (KR)
Filed on Jul. 26, 2022, as Appl. No. 17/874,200.
Claims priority of application No. 10-2021-0099364 (KR), filed on Jul. 28, 2021.
Prior Publication US 2023/0030464 A1, Feb. 2, 2023
Int. Cl. H01J 37/32 (2006.01); H01J 37/34 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/32715 (2013.01); H01J 37/32807 (2013.01); H01J 37/3482 (2013.01); H01L 21/67248 (2013.01); H01L 21/68735 (2013.01); H01L 21/68742 (2013.01); H01L 21/6875 (2013.01); H01L 22/26 (2013.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01); H01L 21/3065 (2013.01); H01L 21/6833 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate treating apparatus comprising:
a housing having a treating space for treating a substrate;
a support unit supporting the substrate at the treating space;
a gas supply unit supplying a process gas into the treating space; and
a plasma source generating a plasma from the process gas, and
wherein the support unit comprises:
a dielectric plate having a top surface to place the substrate thereon;
a top ring surrounding a circumference of the substrate placed on the dielectric plate;
a temperature sensor measuring a temperature of the top ring;
a first lifting/lowering member lifting or lowering the top ring;
a bottom ring surrounding a bottom surface of an edge of the substrate placed on the dielectric plate, the dielectric plate, and an inside of the top ring, and
a controller, and
wherein the bottom ring is combined with the top ring to form an insertion space defining a lifting/lowering limit of the first lifting/lowering member therein, when the top ring is lifted or lowered by the first lifting/lowering member, and
wherein the controller controls the first lifting/lowering member to change a height of the top ring according to an etching amount of the top ring calculated based on the temperature of the top ring measured by the temperature sensor.