US 12,463,019 B2
Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
Keith Kuang-Kuo Koai, Hsinchu County (TW); Shih-Kuo Liu, Nantou County (TW); Wen-Chih Wang, New Taipei (TW); and Hsin-Liang Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/815,236.
Application 17/815,236 is a division of application No. 16/583,066, filed on Sep. 25, 2019, granted, now 11,443,923.
Prior Publication US 2022/0359169 A1, Nov. 10, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/687 (2006.01)
CPC H01J 37/32642 (2013.01) [H01L 21/02019 (2013.01); H01L 21/3065 (2013.01); H01L 21/68721 (2013.01); H01L 21/68742 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor structure, comprising:
placing a wafer on a chuck, wherein the wafer is surrounded by a focus ring, the focus ring is supported by a first actuator, wherein the first actuator is in a cavity defined by the chuck and an edge ring, wherein the first actuator comprises:
an outer ring disposed in the cavity, wherein the outer ring is fixed to the edge ring, and a chamber is defined in the outer ring;
a piezoelectric layer apart from a top surface of the cavity, wherein an edge of the piezoelectric layer is fixed by the outer ring; and
an inner ring disposed in the chamber at a center portion of the piezoelectric layer, wherein the inner ring overlaps with the focus ring from a top view perspective;
performing plasma etch on a surface of the wafer; and
controlling a distance between a gas distribution plate (GDP) and a top surface of the focus ring to be less than a threshold value by the first actuator.