US 12,463,018 B2
Edge ring, substrate processing apparatus having the same and method of manufacturing semiconductor device using the apparatus
Hongtaek Lim, Seoul (KR); Junghyeon Kim, Yongin-si (KR); Sanggon Shin, Hwaseong-si (KR); Oleg Feygenson, Hwaseong-si (KR); Kyuho Lee, Hwaseong-si (KR); Donghoon Han, Seoul (KR); and Kwangpyo Hong, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 21, 2020, as Appl. No. 17/027,460.
Claims priority of application No. 10-2019-0178956 (KR), filed on Dec. 31, 2019.
Prior Publication US 2021/0202217 A1, Jul. 1, 2021
Int. Cl. H01J 37/32 (2006.01); C23C 16/458 (2006.01)
CPC H01J 37/32642 (2013.01) [C23C 16/4585 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A substrate processing system, comprising:
a substrate stage having a wafer seating surface and a backside gas channel;
a wafer seated on the wafer seating surface; and
an edge ring supported by the substrate stage, the edge ring comprising:
an annular shaped body portion mounted on the substrate stage and having an annular bottom surface contacting the substrate stage and an annular top surface;
a first step portion extending along an inner periphery of the annular shaped body portion and having a first annular bottom surface positioned higher than the annular bottom surface of the annular shaped body portion by a first height;
an inclined portion extending along an inner periphery of the first step portion and having an inclined bottom surface extending at a first angle with respect to a first plane in which the first annular bottom surface is placed;
a second step portion extending along an inner periphery of the inclined portion and extending to an innermost extent of a second annular bottom surface defined by the second step portion, the second step portion vertically overlapping the wafer seated on the wafer seating surface, the second annular bottom surface positioned higher than the annular bottom surface of the annular shaped body portion by a second height greater than the first height, the second annular bottom surface positioned over the backside gas channel of the substrate stage; and
a plurality of passages extending outwardly at a second angle from the first annular bottom surface of the first step portion,
wherein a vertical distance between the second annular bottom surface and a top surface of the wafer is a third height,
wherein a relationship between the first height and the third height is configured to control a proportion of a backside gas that flows through the plurality of passages,
the inclined bottom surface of the inclined portion is positioned to face an end portion of the wafer seated on the wafer seating surface, and
a portion of the first annular bottom surface is located between the plurality of passages and the backside gas channel.