US 12,463,017 B2
Substrate processing apparatus, plasma light emitting apparatus and method of manufacturing semiconductor device
Tsuyoshi Takeda, Toyama (JP); and Daisuke Hara, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Feb. 3, 2023, as Appl. No. 18/105,395.
Application 18/105,395 is a continuation of application No. PCT/JP2020/035535, filed on Sep. 18, 2020.
Prior Publication US 2023/0187179 A1, Jun. 15, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32146 (2013.01); H01J 37/32568 (2013.01); H01J 37/32834 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed; and
a plasma generator comprising:
a first gas supply pipe through which a first gas is supplied,
an application electrode to which a high frequency power is applied,
a reference electrode to which a reference potential is applied by being grounded, and
a light emitting tube by which the first gas is photo-exited;
a second gas supply pipe through which a second gas is supplied is connected to the light emitting tube; and
an opening/closing valve configured to confine the second gas within the light emitting tube is connected to the light emitting tube, and
wherein the light emitting tube is capable of emitting a light by converting the second gas confined in the light emitting tube into a plasma state in accordance with an electrical action between the application electrode and the reference electrode.