US 12,462,983 B2
Embeddable semiconductor-based capacitor
Cory Nelson, Simpsonville, SC (US); and Jeff Borgman, Myrtle Beach, SC (US)
Assigned to KYOCERA AVX Components Corporation, Fountain Inn, SC (US)
Filed by KYOCERA AVX Components Corporation, Fountain Inn, SC (US)
Filed on May 10, 2022, as Appl. No. 17/740,417.
Claims priority of provisional application 63/188,528, filed on May 14, 2021.
Prior Publication US 2022/0367733 A1, Nov. 17, 2022
Int. Cl. H01G 4/005 (2006.01); H01G 4/12 (2006.01); H01G 4/252 (2006.01); H01G 4/33 (2006.01); H05K 1/18 (2006.01)
CPC H01G 4/33 (2013.01) [H01G 4/005 (2013.01); H01G 4/1272 (2013.01); H01G 4/252 (2013.01); H05K 1/185 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An embeddable capacitor comprising:
a substrate comprising a semiconductor material;
a conductive layer formed over the substrate;
an intervening layer between the substrate and the conductive layer, wherein the intervening layer comprises one or more of an oxide layer and an insulator layer;
a plurality of distinct coplanar upper terminals formed over the conductive layer;
a lower terminal formed over a lower surface of the substrate opposite the top surface of the substrate;
wherein each of the plurality of distinct coplanar upper terminals has a maximum width, a surface area, and a thickness normal to the maximum width, wherein a ratio of the maximum width to the thickness is greater than about 80:1 and a ratio of a cumulative surface area of all the upper terminals to a surface area of the substrate is in a range from about 0.6:1 to about 0.99:1.