US 12,462,890 B2
Method for operating a memory device and memory device thereof
Chi-Yi Shao, Hsinchu County (TW); and Chia-Cho Wu, Hsinchu County (TW)
Assigned to PUFSECURITY CORPORATION, Hsinchu County (TW)
Filed by PUFsecurity CORPORATION, Hsinchu County (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,530.
Claims priority of provisional application 63/426,369, filed on Nov. 18, 2022.
Prior Publication US 2024/0170086 A1, May 23, 2024
Int. Cl. G11C 17/16 (2006.01); G11C 29/10 (2006.01); G11C 29/18 (2006.01)
CPC G11C 29/18 (2013.01) [G11C 29/10 (2013.01); G11C 2029/1806 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for operating a memory device, the memory device comprising a memory array, the memory array comprising a plurality of rows of repair one-time programmable (OTP) cells and a plurality of rows of main OTP cells, and the method comprising:
performing a testing procedure to determine validities of the plurality of rows of repair OTP cells and store repair information to a first part of rows of repair OTP cells that are determined to be valid; and
performing a repairing procedure to determine validities of the plurality of rows of main OTP cells and repair at least one row of main OTP cells that is determined to be invalid in the plurality of rows of main OTP by using a second part of the rows of repair OTP cells that are determined to be valid.