| CPC G11C 16/3427 (2013.01) [G11C 16/26 (2013.01); G11C 16/3459 (2013.01)] | 20 Claims |
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1. A method of performing a sensing operation in a memory device, comprising the steps of:
preparing a memory block that includes an array of split-gate cells that are arranged in a plurality of word lines, the split-gate cells including first memory cells and second memory cells that can operate independently of one another, a plurality of the first memory cells being electrically connected with one another in a first-side string and a plurality of the second memory cells being electrically connected with one another in a second-side string;
applying a reference voltage to a selected first memory cell in a selected word line;
applying a first positive voltage to the second memory cells of a plurality of unselected word lines to partially turn on the second memory cells of the unselected word lines;
applying at least one pass voltage to the first memory cells of the unselected word lines to turn on the first memory cells of the unselected word lines; and
conducting a current through the selected first memory cell to detect a threshold voltage of the selected first memory cell.
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