US 12,462,873 B2
Thin film storage transistor with silicon oxide nitride charge trapping layer
Scott Brad Herner, Portland, OR (US)
Assigned to SUNRISE MEMORY CORPORATION, San Jose, CA (US)
Filed by SUNRISE MEMORY CORPORATION, San Jose, CA (US)
Filed on Apr. 28, 2022, as Appl. No. 17/661,255.
Claims priority of provisional application 63/196,587, filed on Jun. 3, 2021.
Prior Publication US 2022/0392529 A1, Dec. 8, 2022
Int. Cl. G11C 16/04 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01)
CPC G11C 16/0483 (2013.01) [H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 30/693 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A thin-film storage transistor, comprising a source region, a drain region, a channel region, a gate conductor, and a charge storage film provided between the channel region and the gate conductor and electrically isolated therefrom, the charge storage film comprising:
a tunneling dielectric layer formed adjacent the channel region; and
a charge trapping layer formed adjacent the tunneling dielectric layer, the charge trapping layer comprising a silicon-rich silicon oxide nitride layer including silicon, silicon oxide and silicon nitride materials,
wherein the charge trapping layer has a composition including 44 atomic percent of silicon, at least 9 atomic percent of oxygen, and at least 42 atomic percent of nitrogen.