| CPC G11C 11/2273 (2013.01) [G11C 11/221 (2013.01); G11C 11/2275 (2013.01)] | 17 Claims |

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1. A calibration circuit for calibrating a sensing capacitance used by a sensing circuit when reading memory cells of a memory, the calibration circuit comprising:
a calibration cell associated with a predefined programming state of the calibration cell; wherein the calibration cell comprises a plurality of calibration cells and at least two calibration cells of the plurality of calibration cells are associated with the predefined programming state;
a read circuit configured to:
perform a parallel read operation on the at least two calibration cells of the plurality of calibration cells that generates a calibration voltage based on the predefined programming state;
convert the calibration voltage from the parallel read operation to a target sensing capacitance value based on the calibration voltage;
provide the target sensing capacitance value to the memory as the sensing capacitance for the sensing circuit when reading the memory cells of the memory.
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