US 12,462,859 B2
Free-layer design for a voltage control of magnetic anisotropy magnetic random access memory device
Robert Carpenter, Kessel-lo (BE); Woojim Kim, Watermael-Boitsfort (BE); and Kiroubanand Sankaran, Herent (BE)
Assigned to Imec VZW, Leuven (BE)
Filed by IMEC VZW, Leuven (BE)
Filed on Dec. 7, 2022, as Appl. No. 18/062,785.
Claims priority of application No. 21213085 (EP), filed on Dec. 8, 2021.
Prior Publication US 2023/0178131 A1, Jun. 8, 2023
Int. Cl. G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A magnetic structure for a voltage controlled magnetic anisotropy, VCMA, magnetic random access memory, MRAM, device, the magnetic structure comprising:
a magnetic reference layer;
a tunnel barrier layer provided directly on the magnetic reference layer;
an interface layer provided directly on the tunnel barrier layer, wherein the interface layer consists of an iridium layer provided directly on the tunnel barrier layer and an iron layer provided directly on the iridium layer;
a magnetic free layer provided directly on the interface layer; and
a cap layer provided directly on the magnetic free layer;
wherein the interface layer and the cap layer enhance an orbital occupancy and/or a spin-orbit-coupling of the magnetic free layer.