US 12,462,852 B2
Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration
John D. Hopkins, Meridian, ID (US); Jordan D. Greenlee, Boise, ID (US); and Peng Xu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 16, 2022, as Appl. No. 18/083,431.
Application 18/083,431 is a division of application No. 16/585,346, filed on Sep. 27, 2019, granted, now 11,562,773.
Prior Publication US 2023/0116988 A1, Apr. 20, 2023
Int. Cl. G11C 5/06 (2006.01); C23C 8/06 (2006.01); C23C 8/36 (2006.01); C23C 28/00 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC G11C 5/063 (2013.01) [C23C 8/06 (2013.01); C23C 8/36 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 15 Claims
OG exemplary drawing
 
1. An assembly comprising a metal-containing conductive material having a first region adjacent a second region; the first region having a smaller average grain size per unit area relative to the second region, the metal-containing conductive material having a concentration gradient of one or both of fluorine and boron with a highest concentration of the one or both of fluorine and boron being within the second region; the metal-containing conductive material conductive structure being within a conductive level; said conductive level being one of many substantially identical conductive levels within a stack having insulative levels alternating with the conductive levels.