US 12,462,375 B2
Methods to automatically adjust one or more parameters of a camera system for optimal 3D reconstruction of features formed within/on a semiconductor substrate
Mirko Vukovic, Albany, NY (US); and Ryan Lloyd, Chaska, MN (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/881,881.
Prior Publication US 2024/0046446 A1, Feb. 8, 2024
Int. Cl. G06T 7/00 (2017.01); G06T 7/80 (2017.01); G06T 15/00 (2011.01)
CPC G06T 7/001 (2013.01) [G06T 7/80 (2017.01); G06T 15/00 (2013.01); G06T 2207/30148 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for inspecting features formed within and/or on a semiconductor substrate, the method comprising:
capturing a stack of images of a feature formed within and/or on the semiconductor substrate using a camera system, wherein the camera system utilizes a plurality of parameters to capture the stack of images;
analyzing one or more images in the stack of images, during or after said capturing the stack of images, to determine if one or more of the parameters used by the camera system should be adjusted to capture the feature more accurately, wherein if said analyzing determines that one or more of the parameters should be adjusted, the method further comprises:
determining optimum settings for the one or more parameters to capture the feature depicted in the stack of images more accurately; and
automatically adjusting the one or more parameters in accordance with the optimum settings before the camera system is utilized to capture additional images of the feature, wherein the additional images are included within the stack of images;
assigning weights to each image within the stack of images to specify whether or not geometrical information is provided within the image for the feature; and
using the weights assigned to the images to perform one or more of the following: (a) identify unexplored areas of the semiconductor substrate or the feature, and (b) suggest different camera poses or rotating mirror tilt angles for capturing the unexplored areas of the semiconductor substrate or the feature.