US 12,462,021 B2
Semiconductor memory device and method for generating message authentication code thereof
Ho-Youn Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 28, 2022, as Appl. No. 18/059,067.
Claims priority of application No. 10-2022-0073859 (KR), filed on Jun. 17, 2022.
Prior Publication US 2023/0409705 A1, Dec. 21, 2023
Int. Cl. G06F 21/55 (2013.01); G06F 21/60 (2013.01); G06F 21/79 (2013.01); H04L 9/32 (2006.01)
CPC G06F 21/554 (2013.01) [G06F 21/602 (2013.01); G06F 21/79 (2013.01); H04L 9/3242 (2013.01); H04L 9/3278 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor memory device, comprising:
a memory core including a plurality of random-access memory cells;
an error correction code (FCC) circuit configured to generate FCC parity of data written to the memory core; and
a message authentication code (MAC) control circuit configured to generate a security key based on a physical unclonable function (PUF) source signal in response to a message authentication code generation command or detection of a hacking or security attack, and configured to control the ECC circuit to generate an authentication code on target data using the security key,
wherein the ECC circuit operates in one of an ECC mode for generating the ECC parity and a MAC mode for generating the MAC under the control of the MAC control circuit.