US 12,461,815 B2
Operation method of storage controller for nonvolatile memory device
Youngjoo Seo, Suwon-si (KR); Youngdeok Seo, Suwon-si (KR); Sangkwon Moon, Suwon-si (KR); Hyunkyo Oh, Suwon-si (KR); Hee-Tai Oh, Suwon-si (KR); Heewon Lee, Suwon-si (KR); and Jisoo Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 17, 2023, as Appl. No. 18/512,613.
Claims priority of application No. 10-2022-0155039 (KR), filed on Nov. 18, 2022; application No. 10-2023-0115347 (KR), filed on Aug. 31, 2023; and application No. 10-2023-0136251 (KR), filed on Oct. 12, 2023.
Prior Publication US 2024/0176700 A1, May 30, 2024
Int. Cl. G06F 11/10 (2006.01); G06F 11/07 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 11/076 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An operation method of a storage controller which is configured to control a nonvolatile memory device, the method comprising:
initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level;
determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value;
selectively skipping or performing a next instance of the respective reliability operation based on the determination result, wherein the selectively skipping or performing of the respective reliability operation includes:
when the number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value, skipping the next instance of the respective reliability operation; and
when the number of consecutively skipped instances of the respective reliability operation is equal to or greater than the respective skip reference value, performing the next instance of the respective reliability operation to obtain respective error information of the respective memory block; and
when the respective error information is less than a threshold value, updating the respective skip reference value of the respective memory block based on the respective error information, wherein the updated respective skip reference value is less than the respective skip reference value.