US 12,461,656 B2
Control method of memory device, and associated flash memory controller and memory device
Wen-Sheng Lin, Kaohsiung (TW)
Assigned to Silicon Motion, Inc., Hsinchu County (TW)
Filed by Silicon Motion, Inc., Hsinchu County (TW)
Filed on Aug. 25, 2024, as Appl. No. 18/814,579.
Claims priority of application No. 112135084 (TW), filed on Sep. 14, 2023.
Prior Publication US 2025/0094058 A1, Mar. 20, 2025
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0616 (2013.01) [G06F 3/0656 (2013.01); G06F 3/0679 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A control method of a memory device, wherein the memory device comprises a flash memory module, the flash memory module comprises multiple blocks, and the control method comprises:
updating a wear leveling related data temporarily stored in a buffer memory;
obtaining multiple parameters;
determining a write frequency according to the multiple parameters; and
copying the wear leveling related data from the buffer memory to the flash memory module according to the write frequency.