US 12,461,651 B2
Data writing method, memory storage device and memory control circuit unit
Chih-Ling Wang, Anhui (CN); En Yang Wang, Anhui (CN); Kuai Cao, Anhui (CN); Dong Dong Yao, Anhui (CN); Yun Peng Zhang, Anhui (CN); and Wen Qing Lv, Anhui (CN)
Assigned to Hefei Core Storage Electronic Limited, Anhui (CN)
Filed by Hefei Core Storage Electronic Limited, Anhui (CN)
Filed on Jul. 1, 2024, as Appl. No. 18/760,055.
Claims priority of application No. 202410102021.8 (CN), filed on Jan. 25, 2024.
Prior Publication US 2025/0244871 A1, Jul. 31, 2025
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0608 (2013.01) [G06F 3/064 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A data writing method for a memory storage device comprising a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module stores a plurality of physical blocks, and the data writing method comprises:
calculating a first number according to a ratio of a capacity of at least one first system table to a capacity of a physical block by a memory control circuit, wherein the first number is a number of physical blocks required to store the at least one first system table;
calculating a second number according to a ratio of a capacity of at least one second system table to the capacity of the physical block by the memory control circuit, wherein the second number is a number of physical blocks required to store the at least one second system table;
selecting the first number of physical blocks and the second number of physical blocks from the plurality of physical blocks as a first virtual block and a second virtual block based on the first number and the second number respectively by the memory control circuit; and
allocating remaining physical blocks other than the first number of physical blocks and the second number of physical blocks as a data block by the memory control circuit,
wherein the first virtual block is used to store the at least one first system table, and the second virtual block is used to store the at least one second system table,
wherein the step of selecting the first number of physical blocks and the second number of physical blocks from the plurality of physical blocks as the first virtual block and the second virtual block based on the first number and the second number respectively by the memory control circuit further comprises:
firstly selecting the first number of physical blocks as the first virtual block and then selecting the second number of physical blocks as the second virtual block by performing partition management on each chip enable (CE) region and each data plane of the rewritable non-volatile memory module by the memory control circuit.