US 12,461,507 B2
Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program
Masashi Sugishita, Toyama (JP); Yuuji Urano, Toyama (JP); Kiyohiko Maeda, Toyama (JP); Masaaki Ueno, Toyama (JP); Tetsuya Kosugi, Toyama (JP); and Masaya Nishida, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jul. 6, 2020, as Appl. No. 16/921,652.
Application 16/921,652 is a continuation of application No. 14/650,074, abandoned, previously published as PCT/JP2013/082573, filed on Dec. 4, 2013.
Claims priority of application No. 2012-268803 (JP), filed on Dec. 7, 2012.
Prior Publication US 2020/0333766 A1, Oct. 22, 2020
Int. Cl. G05B 19/418 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01)
CPC G05B 19/418 (2013.01) [C23C 16/4411 (2013.01); C23C 16/52 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); G05B 2219/45031 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device comprising:
transferring a substrate to a process chamber;
executing a STABLE period by cooling the substrate transferred to the process chamber while heating the substrate from its outer peripheral side; and
after the STABLE period, executing a DEPOSITION period by:
(a) executing an operation of the cooling the substrate and an operation of supplying a process gas simultaneously from a start of the DEPOSITION period for a specific time period, such that a temperature on the outer peripheral side of the substrate is stabilized to be lower than a temperature on a central side of the substrate by a predetermined temperature amount; and
(b) after the specific time period, stopping the operation of the cooling the substrate while the process gas is supplied during the DEPOSITION period, such that a difference between the temperature on the outer peripheral side of the substrate and the temperature on the central side of the substrate is larger than the predetermined temperature amount,
wherein (b) includes:
(c) stopping the operation of the cooling the substrate to increase a temperature of the process chamber and stopping or lowering an operation of the heating the substrate, to thereby increase heat transfer from the process chamber to outside of the process chamber and decrease the temperature on the outer peripheral side of the substrate faster than the temperature on the central side of the substrate; and
(d) after (c), controlling the operation of the heating the substrate to thereby set the temperature on the outer peripheral side of the substrate and the temperature on the central side of the substrate to be a process temperature.