| CPC G03F 7/70033 (2013.01) [G03F 1/62 (2013.01); G03F 7/70983 (2013.01)] | 20 Claims |
|
1. A method, comprising:
generating extreme ultraviolet (EUV) radiation in an EUV lithography system;
passing the EUV radiation through a coating layer of a pellicle membrane, the coating layer including one or more compounds selected from non-metal carbide compounds, non-metal silicide compounds, transition metal carbide compounds and transition metal silicide compounds that exhibit a ratio of EUV % transmittance to thickness in nanometers between 40 and 10;
passing the EUV radiation that has passed through the coating layer through a transparent layer of the pellicle membrane, the transparent layer comprising a plurality of nanotubes, the plurality of nanotubes including nanotubes having a core shell structure;
reflecting the EUV radiation that has passed through the transparent layer from a mask; and
receiving the EUV radiation, reflected by the mask, at a semiconductor substrate to expose a resist layer disposed thereon.
|