| CPC G03F 1/32 (2013.01) | 15 Claims |
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1. A blank mask comprising:
a transparent substrate;
a phase shift film disposed on the transparent substrate; and
a light shielding film, consisting of a lower layer and an upper layer of CrN, with the lower layer disposed on the phase shift film;
wherein the lower layer of the light shielding film comprises oxygen in an amount of 25 to 40 atom %,
wherein the upper layer of the light shielding film is formed by sputtering with a sputtering gas having a flow rate of N2 which is 30% or more compared to a total flow rate of the sputtering gas,
wherein the phase shift film comprises molybdenum;
wherein the phase shift film has a transmittance of 4 to 8% for ArF light,
wherein the phase shift film comprises a phase difference adjustment layer comprising a surface containing nitrogen and the molybdenum in a uniform mixture in the in-plane direction of the surface, and
wherein a TFT1 value expressed by Equation 1 below is 0.25 μm/100° C. or less;
 where, when the thermal variation of the processed blank mask, which is formed by processing the thickness of the transparent substrate of the blank mask to be 0.6 mm and removing the light shielding film, is analyzed in a thermomechanical analyzer,
the measuring temperature of the thermomechanical analyzer is increased from the T1 to the T2, and
the ΔPM is a position change of the upper surface of the phase shift film in the thickness direction at the T2, based on a position of the upper surface of the phase shift film at the T1.
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