US 12,461,396 B2
Heating of thermo-optic device
Meer Nazmus Sakib, Berkeley, CA (US); Saeed Fathololoumi, Los Gatos, CA (US); Harel Frish, Albuquerque, NM (US); John Heck, Berkeley, CA (US); Eddie Bononcini, Corrales, NM (US); Reece Defrees, Rio Rancho, NM (US); Stanley J. Dobek, Rio Rancho, NM (US); Aliasghar Eftekhar, Fremont, CA (US); Walter Garay, Plano, TX (US); Lingtao Liu, Chandler, AZ (US); and Wei Qian, Walnut, CA (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 25, 2021, as Appl. No. 17/358,256.
Prior Publication US 2021/0318561 A1, Oct. 14, 2021
Int. Cl. G02F 1/01 (2006.01); G02B 6/132 (2006.01); G02B 6/136 (2006.01)
CPC G02F 1/0147 (2013.01) [G02B 6/132 (2013.01); G02B 6/136 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a substrate comprising silicon;
a base layer on the substrate, wherein the base layer comprises silicon oxide;
a waveguide on the base layer;
a heater over the waveguide, wherein the heater comprises a metal;
a heat transfer layer between the heater and the waveguide, wherein the heat transfer layer comprises a compound of nitrogen and at least one of silicon, aluminum or boron; and
a cladding layer that laterally surrounds the heater, the heat transfer layer, and the waveguide, wherein the cladding layer comprises silicon oxide.