| CPC G02B 6/132 (2013.01) | 20 Claims |
|
1. A method for processing semiconductor devices, the method comprising:
providing a first wafer;
providing a second wafer, the second wafer comprising a silicon material, wherein a size difference between the first wafer and the second wafer is less than 0.1%;
forming a first layer of dielectric on the first wafer and a second layer of the dielectric on the second wafer;
measuring a refractive index distribution of the second layer on the second wafer;
measuring a first thickness distribution of the first layer on the first wafer;
calculating a second thickness distribution for the first layer based on the refractive index distribution and the first thickness distribution; and
removing material from the first layer based on thickness differences from the first thickness distribution to the second thickness distribution, resulting in a third layer in the second thickness distribution characterized by a spectral response with a characteristic wavelength variation less than 5 nm across the first wafer.
|