US 12,461,308 B2
Method for III-V/silicon hybrid integration
Guomin Yu, Glendora, CA (US); Mohamad Dernaika, Cork (IE); Ludovic Caro, Cork (IE); Hua Yang, Cork (IE); and Aaron John Zilkie, Pasadena, CA (US)
Assigned to Rockley Photonics Limited, Altrincham (GB)
Filed by ROCKLEY PHOTONICS LIMITED, Altrincham (GB)
Filed on Apr. 8, 2024, as Appl. No. 18/629,756.
Application 18/629,756 is a continuation of application No. 17/858,021, filed on Jul. 5, 2022, granted, now 11,953,728.
Application 17/858,021 is a continuation in part of application No. 17/167,065, filed on Feb. 3, 2021, granted, now 11,378,762, issued on Jul. 5, 2022.
Application 17/167,065 is a continuation in part of application No. 16/532,406, filed on Aug. 5, 2019, granted, now 11,036,005, issued on Jun. 15, 2021.
Claims priority of provisional application 62/880,585, filed on Jul. 30, 2019.
Claims priority of provisional application 62/715,123, filed on Aug. 6, 2018.
Prior Publication US 2024/0402427 A1, Dec. 5, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 6/13 (2006.01); H01L 21/677 (2006.01); H01L 21/68 (2006.01); H01L 23/544 (2006.01); H01L 25/16 (2023.01); G02B 6/12 (2006.01)
CPC G02B 6/13 (2013.01) [H01L 21/67751 (2013.01); H01L 21/681 (2013.01); H01L 23/544 (2013.01); H01L 25/167 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12142 (2013.01); H01L 2223/54426 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An optoelectronic device comprising:
a precursor photonic device comprising:
a substrate,
a bonding region, for receiving and bonding to a transfer die, and
a plurality of first alignment marks, for use in transfer printing, said first alignment marks being located in or adjacent to the bonding region and etched into the substrate; and
a transfer die comprising:
a photonic device, said photonic device having a bonding surface suitable for bonding to a precursor photonic device, and
a plurality of second alignment marks, for use in a transfer-print process, wherein each of the plurality of second alignment marks of the transfer die is selected from two or more different types of alignment mark, and
wherein the photonic device is an electro-absorption modulator, wherein said electro-absorption modulator comprises an input waveguide and an output waveguide, and wherein both of said input waveguide and said output waveguide comprise a port located on a same side of the transfer die.