US 12,461,302 B2
Optical power splitter and method of manufacturing the same
Tai-Chun Huang, New Taipei (TW); and Stefan Rusu, Sunnyvale, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 11, 2024, as Appl. No. 18/600,777.
Application 18/600,777 is a continuation of application No. 17/748,115, filed on May 19, 2022, granted, now 11,953,719.
Prior Publication US 2024/0219627 A1, Jul. 4, 2024
Int. Cl. G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/126 (2006.01); G02B 6/13 (2006.01); G02B 6/27 (2006.01)
CPC G02B 6/12002 (2013.01) [G02B 6/1228 (2013.01); G02B 6/126 (2013.01); G02B 6/13 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/1215 (2013.01); G02B 2006/12154 (2013.01); G02B 6/2706 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optical device comprising:
a substrate;
a first optical layer on the substrate, wherein the first optical layer comprises a top surface, a first sidewall and a second sidewall opposite to the first sidewall;
a high k layer disposed on the top surface of the first optical layer, wherein the high k layer comprises a fifth sidewall and a sixth sidewall opposite to the fifth sidewall; and
a second optical layer on the high k layer, wherein the second optical layer comprises a top surface, a third sidewall and a fourth sidewall opposite to the third sidewall, wherein the first sidewall of the first optical layer is misaligned with the third sidewall of the second optical layer, and wherein the second sidewall of the first optical layer is coplanar with the fourth sidewall of the second optical layer, wherein the high k layer fully covers the top surface of the first optical layer, wherein the third sidewall of the second optical layer is recessed from the fifth sidewall of the high k layer.