| CPC G01T 1/20182 (2020.05) [H10F 39/1898 (2025.01); H10F 39/802 (2025.01); H10F 39/80377 (2025.01); H10F 39/8057 (2025.01); H10F 39/811 (2025.01)] | 20 Claims |

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1. A photoelectric detector having a pixel region and a peripheral region surrounding the pixel region, the photoelectric detector comprising:
a base substrate;
plurality of pixel units arranged on the base substrate and positioned in the pixel region, at least one of the pixel units comprising a thin film transistor having a first electrode and a second electrode, a photodiode having a first electrode and a second electrode, and a storage capacitor having a first electrode plate and a second electrode plate,
wherein for each pixel unit, the first electrode of the thin film transistor is connected with the first electrode of the photodiode and the first electrode plate of the storage capacitor, the second electrode of the photodiode is connected with a first bias signal line, the second electrode plate of the storage capacitor is connected with a second bias signal line, and the first bias signal line is electrically connected with the second bias signal line at a connection node located in the peripheral region,
wherein an orthographic projection of the second electrode plate of the storage capacitor on the base substrate is located within an orthographic projection of the first electrode plate of the storage capacitor on the base substrate.
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