US 12,461,207 B2
Optoelectronic device
Raul Andres Bianchi, Myans (FR); and Christel Marie-Noëlle Buj, Grenoble (FR)
Assigned to STMicroelectronics International N.V., Geneva (CH)
Filed by STMicroelectronics International N.V., Geneva (CH)
Filed on May 22, 2024, as Appl. No. 18/671,527.
Claims priority of application No. 2305136 (FR), filed on May 24, 2023.
Prior Publication US 2024/0393439 A1, Nov. 28, 2024
Int. Cl. G01S 7/481 (2006.01); G01S 17/894 (2020.01); H10F 39/00 (2025.01)
CPC G01S 7/4816 (2013.01) [G01S 17/894 (2020.01); H10F 39/8033 (2025.01); H10F 39/807 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A process to control an optoelectronic device, the process comprising:
applying a biasing voltage to the optoelectronic device, the optoelectronic device including:
a substrate having a first face opposite a second face;
a single-photon avalanche diode (SPAD) in the substrate, the SPAD including:
a first region doped with a first type of conductivity, level with the first face; and
a second region doped with a second type of conductivity, extending from the first face to the second face;
a dielectric layer on the second face; and
a conductive region at the second face, the conductive region being a conducting layer extending on the second face and separated from the second face by the dielectric layer, the applying of the biasing voltage to the optoelectronic device including applying the biasing voltage to the conductive region; and
generating an electric field that accelerates charges generated in the SPAD in response to the applying of the biasing voltage to the conductive region.