US 12,461,174 B2
Cross-shaped high-temperature three-dimensional hall sensor and preparation method thereof
Huolin Huang, Dalian (CN); and Kaiming Ma, Dalian (CN)
Assigned to DALIAN UNIVERSITY OF TECHNOLOGY, Dalian (CN)
Filed by DALIAN UNIVERSITY OF TECHNOLOGY, Dalian (CN)
Filed on Dec. 11, 2023, as Appl. No. 18/534,977.
Claims priority of application No. 202211580260.1 (CN), filed on Dec. 9, 2022.
Prior Publication US 2024/0192290 A1, Jun. 13, 2024
Int. Cl. G01R 33/02 (2006.01); G01R 33/00 (2006.01); G01R 33/07 (2006.01)
CPC G01R 33/07 (2013.01) [G01R 33/0076 (2013.01); G01R 33/0206 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A cross-shaped high-temperature resistant three-dimensional Hall sensor, characterized by comprising: X-column, Y-column, Z-column, electrode C1, electrode C2, electrode C3, electrode C4, electrode C5, and electrode C6; the X-column, the Y-column, and the Z-column are all made of third-generation semiconductor materials, and the X-column, the Y-column, and the Z-column are vertically connected to each other; electrodes C1 and C2 are respectively set at both ends of the Z-column, electrodes C3 and C4 are set on both sides of the Y-column, and electrodes C5 and C6 are set on both sides of the X-column.