US 12,461,052 B2
Sensor
Yumi Hayashi, Ayase Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Jan. 26, 2023, as Appl. No. 18/159,877.
Claims priority of application No. 2022-092774 (JP), filed on Jun. 8, 2022; and application No. 2022-138529 (JP), filed on Aug. 31, 2022.
Prior Publication US 2023/0408434 A1, Dec. 21, 2023
Int. Cl. G01N 27/22 (2006.01); G01N 33/00 (2006.01)
CPC G01N 27/22 (2013.01) [G01N 33/0027 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A sensor, comprising:
a structure,
the structure including
a base layer including at least one selected from the group consisting of silicon, aluminum, and titanium, and at least one selected from the group consisting of oxygen and nitrogen;
a first layer;
a first film including a first film region; and
a first intermediate layer including a first partial region,
the first partial region being between the first layer and the first film region,
a volume of the first layer being changeable depending on a detection target around the structure,
the first film including silicon and oxygen, and
the first intermediate layer including at least one selected from the group consisting of Pd, Pt and Ti.