US 12,461,034 B2
In-situ fluorescence-based chamber and wafer monitoring
David Eitan Barlaz, Albany, NY (US); Scott Lefevre, Albany, NY (US); Joshua Larose, Albany, NY (US); and Henry Puretz, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 29, 2023, as Appl. No. 18/478,954.
Prior Publication US 2025/0110055 A1, Apr. 3, 2025
Int. Cl. G01N 21/64 (2006.01); G01N 21/01 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC G01N 21/6489 (2013.01) [G01N 21/01 (2013.01); G01N 21/6445 (2013.01); H01L 21/67253 (2013.01); H01L 21/68742 (2013.01); H01L 22/12 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A monitoring system, comprising:
a semiconductor processing chamber including a surface of an electrostatic chuck (ESC) within the semiconductor processing chamber and a surface of an internal wall of the semiconductor processing chamber;
a laser source configured to provide laser light incident on a surface including one selected from the group consisting of the surface of the ESC, the surface of the internal wall and a surface of a wafer contained in the semiconductor processing chamber to induce fluorescence from the surface;
a light detector configured to detect the fluorescence from the surface, wherein at least one of the laser source and the light detector is provided outside of the semiconductor processing chamber; and
a computer module configured to analyze the fluorescence and determine a chemical characteristic of the surface based on the fluorescence.